ds30319 rev. 3 - 2 1 of 3 ddta (r1-only series) e www.diodes.com diodes incorporated ddta (r1-only series) e pnp pre-biased small signal sot-523 surface mount transistor epitaxial planar die construction complementary npn types available (ddtc) built-in biasing resistor, r1 only also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g top view c e b n mechanical data case: sot-523, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 3, on page 2 terminal connections: see diagram marking: date code and marking code (see diagrams & page 2) weight: 0.002 grams (approx.) ordering information (see page 2) t c u d o r p w e n b r 1 schematic diagram e c p/n r1 (nom) marking ddta113te ddta123te ddta143te ddta114te ddta124te ddta144te ddta115te DDTA125TE 1k 2.2k 4.7k 10k 22k 47k 100k 200k p01 p03 p07 p12 p16 p19 p23 p25 characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c (max) -100 ma power dissipation p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
ds30319 rev. 3 - 2 2 of 3 ddta (r1-only series) e www.diodes.com characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -50 v i c = -1ma emitter-base breakdown voltage bv ebo -5 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current i ebo -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c/ i b = -10ma/-1ma ddta113te i c/ i b = -5ma/-0.5ma ddta123te i c/ i b = -2.5ma/-.25ma ddta143te i c/ i b = -1ma/-.1ma ddta114te i c/ i b = -5ma/-0.5ma ddta124te i c/ i b = -2.5ma/-.25ma ddta144te i c/ i b = -1ma/-0.1ma ddta115te i c/ i b = -.5ma/-.05ma DDTA125TE dc current transfer ratio h fe 100 250 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 250 mhz v ce = -10v, i e = 5ma, f = 100mhz electrical characteristics @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only device packaging shipping ddta113te-7 sot-523 3000/tape & reel ddta123te-7 sot-523 3000/tape & reel ddta143te-7 sot-523 3000/tape & reel ddta114te-7 sot-523 3000/tape & reel ddta124te-7 sot-523 3000/tape & reel ddta144te-7 sot-523 3000/tape & reel ddta115te-7 sot-523 3000/tape & reel DDTA125TE-7 sot-523 3000/tape & reel notes: 2. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: DDTA125TE-7-f. (note 2) ordering information month jan feb march apr may jun jul aug sep oct nov dec code 12345 67 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key xxxym marking information xxx = product type marking code (see page 1, e.g. p01 = ddta113te) ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september
ds30319 rev. 3 - 2 3 of 3 ddta (r1-only series) e www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 6 12 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 10 8 4 2 i=0v e 10 1000 100 1 1 10 100 hfe, dc current gain (normalized) i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 25 c 75 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (milliwatts) d typical curves - ddta114te
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